2N5961
2N5962
2N5963
SILICON
NPN TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5961 series
devices are epoxy molded silicon NPN transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain (hFE) and
low noise.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
2N5962
45
2N5963
30
UNITS
V
45
30
V
60
VEBO
IC
7.0
V
50
mA
PD
PD
TJ, Tstg
625
mW
Continuous Collector Current
Power Dissipation
2N5961
60
1.5
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5961
2N5962
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
VCB=Rated VCBO
2.0
2.0
ICBO
VCB=Rated VCBO, TA=65°C
50
50
2N5963
MIN MAX
2.0
UNITS
nA
-
50
nA
IEBO
VEB=5.0V
-
1.0
-
1.0
-
1.0
nA
BVCBO
IC=10μA
60
-
45
-
30
-
V
BVCEO
IC=5.0mA
60
-
45
-
30
-
V
BVEBO
IE=10μA
7.0
-
7.0
-
7.0
-
V
VCE(SAT)
IC=10mA, IB=0.5mA, PW=300μs
VBE(ON)
VCE=5.0V,
VCE=5.0V,
hFE
hFE
hFE
hFE
hfe
fT
Cob
Cib
IC=1.0mA
IC=10μA
VCE=5.0V, IC=100μA
VCE=5.0V, IC=1.0mA
-
0.2
-
0.2
-
0.2
V
0.5
0.7
0.5
0.7
0.5
0.7
V
100
-
450
-
900
-
120
-
500
-
1.0K
-
135
-
550
-
1.2K
-
VCE=5.0V, IC=10mA
VCE=5.0V, IC=10mA, f=1.0kHz
150
700
600
1.4K
1.2K
2.2K
150
1.0K
600
2.0K
1.2K
3.0K
VCE=5.0V, IC=10mA, f=100MHz
VCB=5.0V, IE=0
100
-
100
-
150
-
VEB=0.5V, IC=0
MHz
-
4.0
-
4.0
-
4.0
pF
-
6.0
-
6.0
-
6.0
pF
R1 (2-March 2016)
2N5961
2N5962
2N5963
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N5961 2N5962
SYMBOL TEST CONDITIONS
MAX
MAX
NF
VCE=5.0V, IC=100μA, RS=1.0kΩ, BW=400Hz, f=1.0kHz
6.0
6.0
NF
NF
NF
NF
NF*
VCE=5.0V, IC=100μA, RS=10kΩ, BW=400Hz, f=1.0kHz
VCE=5.0V, IC=100μA, RS=100kΩ, BW=400Hz, f=1.0kHz
VCE=5.0V, IC=10μA, RS=10kΩ, BW=400Hz, f=1.0kHz
VCE=5.0V, IC=100μA, RS=1.0kΩ, BW=10Hz, f=10Hz
VCE=5.0V, IC=10μA, RS=1.0kΩ, BW=15.7kHz,
f=10Hz to10kHz
2N5963
MAX
6.0
UNITS
dB
-
4.0
3.0
dB
-
8.0
6.0
dB
3.0
3.0
3.0
dB
-
-
8.0
dB
3.0
3.0
3.0
dB
* Wide Band Noise Figure
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (2-March 2016)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
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www.centralsemi.com/wwreps
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www.centralsemi.com/wwdistributors
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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